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| RMPA2259 28 dBm WCDMA Power EdgeTM Power Amplifier Module May 2005 RMPA2259 28 dBm WCDMA PowerEdgeTM Power Amplifier Module Features * 40% CDMA efficiency at +28dBm average output power * Single positive-supply operation and low power and shutdown modes * Meets WCDMA/UTMS and HSDPA performance requirements * Compact Lead-free compliant LCC package - 4.0 x 4.0 x 1.5 mm * Industry standard pinout * Internally matched to 50 and DC blocked RF input/ output General Description The RMPA2259 power amplifier module (PAM) is designed for WCDMA/UTMS and HSDPA applications. The 2-stage PAM is internally matched to 50 to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) process. Device Functional Block Diagram (Top View) MMIC Vcc1 1 RF IN GND Vmode Vref 10 Vcc2 INPUT MATCH OUTPUT MATCH BIAS/MODE SWITCH 2 3 4 5 9 GND 8 RF OUT 7 GND 6 GND 11 (paddle ground on package bottom) (c)2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com RMPA2259 Rev. E RMPA2259 28 dBm WCDMA Power EdgeTM Power Amplifier Module Absolute Ratings 1 Symbol VCC1, V CC2 Vref Vmode PIN TSTG Supply Voltages Reference Voltage Power Control Voltage RF Input Power Storage Temperature Parameter Ratings 5.0 2.6 to 3.5 3.5 +10 -55 to +150 Units V V V dBm C Note: 1: No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values. Electrical Characteristics1 Symbol f Gp Po PAEd WCDMA Operation Power Gain Linear Output Power PAEd (digital) @ +28dBm PAEd (digital) @ +16dBm PAEd (digital) @ +16dBm Itot High Power Total Current Low Power Total Current Adjacent Channel Leakage Ratio ACLR1 ACLR2 5.0MHz Offset 10.0MHz Offset -40 -43 -53 -66 General Characteristics VSWR NF Rx No 2fo-5fo S Tc Iccq Iref Icc(off) Input Impedance Noise Figure Receive Band Noise Power Harmonic Suppression3 Spurious Outputs 2,3 Parameter Operating Frequency Min 1920 Typ Max 1980 Units MHz dB dB dBm dBm Comments 26.5 24 28 16 40 9 20 450 130 Po=+28dBm; Vmode=0V Po=+16dBm; Vmode2.0V Vmode=0V Vmode2.0V Vmode=0V Vmode2.0V Vmode2.0V, Vcc=1.4V Po=+28dBm, Vmode=0V Po=+16dBm, Vmode2.0V WCDMA Modulation 3GPP 3.2 03-00 DPCCH+1 DCDCH % % % mA mA dBc dBc dBc dBc Po=+28dBm; Vmode=0V Po=+16dBm; Vmode2.0V Po=+28dBm; Vmode=0V Po=+16dBm; Vmode2.0V 2.0:1 3 -139 -30 -60 10:1 -30 50 5 1 8 5 85 C mA mA A Vmode2.0V Po+28dBm No applied RF signal dB dBm/Hz Po+28dBm; 2110 to 2170MHz dBc dBc Po+28dBm Load VSWR 5.0:1 No permanent damage Ruggedness w/ Load Mismatch3 Case Operating Temperature Quiescent Current Reference Current Shutdown Leakage Current DC Characteristics Notes: 1: All parameters met at Tc = +25C, Vcc = +3.4V, f = 1950MHz, and load VSWR 1.2:1. 2: All phase angles. 3: Guaranteed by design. (c)2005 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com RMPA2259 Rev. E RMPA2259 28 dBm WCDMA Power EdgeTM Power Amplifier Module Recommended Operating Conditions1 Symbol f Vcc1, Vcc2 Vref Parameter Operating Frequency Supply Voltage Reference Voltage Operating Shutdown Bias Control Voltage Low-Power High-Power Linear Output Power High-Power Low-Power Case Operating Temperature Min 1920 3.0 2.7 0 1.8 0 Typ 3.4 2.85 Max 1980 4.2 3.1 0.5 3.0 0.5 +28 +16 Units MHz V V V V V dBm dBm C Vmode 2.0 Pout Tc Note: -30 +85 1: RF input power for WCDMA Pout = +28dBm. DC Turn On Sequence: 1. Vcc1 = Vcc2 = 3.4V (typical) 2. Vref = 2.85V (typical) 3. High-Power: Vmode = 0V (Pout > 16dBm) Low-Power: Vmode = 2.0V (Pout < 16dBm) Performance Data RMPA2259 W-CDMA 4x4mm2 PAM Vcc = 3.4V, Vref = 2.85V, Pout = 28dBm 33 32 31 30 GAIN (dB) PAE (%) RMPA2259 W-CDMA 4x4mm2 PAM Vcc = 3.4V, Vref = 2.85V, Pout = 28dBm 45 44 43 42 41 40 39 38 37 36 29 28 27 26 25 24 23 1900 1920 1940 1960 1980 2000 35 1900 1920 1940 1960 1980 2000 FREQUENCY (MHz) FREQUENCY (MHz) Figure 1. RMPA2259 W-CDMA 4x4mm2 PAM Vcc = 3.4V, Vref = 2.85V, Pout = 28dBm -30 -32 -34 -36 ACLR1 (dBc) Figure 2. RMPA2259 W-CDMA 4x4mm2 PAM Vcc = 3.4V, Vref = 2.85V, Pout = 28dBm -40 -42 -44 -46 ACLR2 (dBc) -38 -40 -42 -44 -46 -48 -50 1900 1920 1940 1960 1980 2000 -48 -50 -52 -54 -56 -58 -60 1900 1920 1940 1960 1980 2000 FREQUENCY (MHz) FREQUENCY (MHz) Figure 3. Figure 4. (c)2005 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com RMPA2259 Rev. E RMPA2259 28 dBm WCDMA Power EdgeTM Power Amplifier Module Efficiency Improvement Application In addition to high-power/low-power bias modes, the efficiency of the PA module can be significantly increased at backed-off RF power levels by dynamically varying the supply voltage (Vcc) applied to the amplifier. Since mobile handsets and power amplifiers frequently operate at 10- 20dB back-off, or more, from maximum rated linear power, battery life is highly dependent on the DC power consumed at antenna power levels in the range of 0 to +16dBm. The reduced demand on transmitted RF power allows the PA supply voltage to be reduced for improved efficiency, while still meeting linearity requirements for CDMA modulation with excellent margin. High-efficiency DC-DC converters are now available to implement switched-voltage operation. The following charts show measured performance of the PA module in low-power mode (Vmode = +2.0V) at +16dBm output power and over a range of supply voltages from 3.4V nominal to 1.2V. Power-added efficiency is more than doubled from 9.5 percent to nearly 25 percent (Vcc = 1.2V) while maintaining a typical ACLR1 of -46dBc and ACLR2 of approximately -60dBc. Operation at even lower levels of Vcc supply voltage are possible with a further restriction on the maximum RF output power. As shown below, the PA module can be biased at a supply voltage of as low as 0.7V with an efficiency as high as 10-12 percent at +8dBm output power. Excellent signal linearity is still maintained even under this low supply voltage condition. Performance Data (continued) Low-Power Mode (Po = +16dBm) RMPA2259 W-CDMA 4x4mm2 PAM Vref = 2.85V, Pout = 16dBm 30 29 28 27 GAIN (dB) VCC = 3.4V VCC = 3.0V VCC = 2.0V VCC = 1.5V RMPA2259 W-CDMA 4x4mm2 PAM Vref = 2.85V, Pout = 16dBm 30 25 VCC = 1.2V 26 25 26 20 PAE (%) VCC = 1.5V 15 VCC = 2.0V VCC = 1.2V 23 22 21 20 1900 1920 1940 1960 1980 2000 5 1900 1920 1940 1960 1980 2000 10 VCC = 3.0V VCC = 3.4V FREQUENCY (MHz) FREQUENCY (MHz) Figure 5. RMPA2259 W-CDMA 4x4mm2 PAM Vref = 2.85V, Pout = 16dBm -50 -52 -54 VCC = 3.4V VCC = 2.0V VCC = 1.5V VCC = 1.2V VCC = 3.0V Figure 6. RMPA2259 W-CDMA 4x4mm2 PAM Vref = 2.85V, Pout = 16dBm -35 -37 -39 -41 ACLR1 (dBc) -56 ACLR2 (dBc) -43 -45 -47 -49 -51 -53 -58 VCC = 1.2V -60 -62 -64 -66 -68 VCC = 1.5V VCC = 2.0V VCC = 3.0V VCC = 3.4V -55 1900 1920 1940 1960 1980 2000 -70 1900 1920 1940 1960 1980 2000 FREQUENCY (MHz) FREQUENCY (MHz) Figure 7. Figure 8. (c)2005 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com RMPA2259 Rev. E RMPA2259 28 dBm WCDMA Power EdgeTM Power Amplifier Module Performance Data (continued) RMPA2259 W-CDMA 4x4mm2 PAM Vref = 2.85V, Pout = 16dBm, Freq = 1.95GHz 30 28 26 24 Gain (dB) PAE (%) RMPA2259 W-CDMA 4x4mm2 PAM Vref = 2.85V, Pout = 16dBm, Freq = 1.95GHz 32 28 24 22 20 18 16 0.5 20 16 12 1 1.5 2 2.5 3 3.5 4 8 0.5 1 1.5 2 2.5 3 3.5 4 VCC (V) VCC (V) Figure 9. RMPA2259 W-CDMA 4x4mm2 PAM Vref = 2.85V, Pout = 16dBm, Freq = 1.95GHz -26 -28 -30 -32 -34 ACLR1 (dBc) ACLR2 (dBc) Figure 10. RMPA2259 W-CDMA 4x4mm2 PAM Vref = 2.85V, Pout = 16dBm, Freq = 1.95GHz -48 -50 -52 -54 -56 -58 -60 -62 -64 -66 -36 -38 -40 -42 -44 -46 -48 -50 0.5 1 1.5 2 2.5 3 3.5 4 -68 0.5 1 1.5 2 2.5 3 3.5 4 VCC (V) VCC (V) Figure 11. Figure 12. (c)2005 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com RMPA2259 Rev. E RMPA2259 28 dBm WCDMA Power EdgeTM Power Amplifier Module Performance Data (continued) RMPA2259 W-CDMA 4x4mm2 PAM Vref = 2.85V, Pout = 12dBm, Freq = 1.95GHz 30 28 20 26 GAIN (dB) PAE (%) RMPA2259 W-CDMA 4x4mm2 PAM Vref = 2.85V, Pout = 12dBm, Freq = 1.95GHz 24 24 22 20 16 12 8 18 16 0.5 4 0.5 1 1.5 2 2.5 3 3.5 4 1 1.5 2 2.5 3 3.5 4 VCC (V) VCC (V) Figure 13. RMPA2259 W-CDMA 4x4mm2 PAM Vref = 2.85V, Pout = 12dBm, Freq = 1.95GHz -26 -28 -30 -32 -34 ACLR1 (dBc) ACLR2 (dBc) Figure 14. RMPA2259 W-CDMA 4x4mm2 PAM Vref = 2.85V, Pout = 12dBm, Freq = 1.95GHz -48 -50 -52 -54 -56 -58 -60 -62 -64 -66 -36 -38 -40 -42 -44 -46 -48 -50 0.5 1 1.5 2 2.5 3 3.5 4 -68 0.5 1 1.5 2 2.5 3 3.5 4 VCC (V) VCC (V) Figure 15. Figure 16. (c)2005 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com RMPA2259 Rev. E RMPA2259 28 dBm WCDMA Power EdgeTM Power Amplifier Module Performance Data (continued) RMPA2259 W-CDMA 4x4mm2 PAM Vref = 2.85V, Pout = 8dBm, Freq = 1.95GHz 30 28 26 GAIN (dB) PAE (%) RMPA2259 W-CDMA 4x4mm2 PAM Vref = 2.85V, Pout = 8dBm, Freq = 1.95GHz 14 12 10 8 6 4 2 0 0.5 24 22 20 18 16 0.5 1 1.5 2 2.5 3 3.5 4 1 1.5 2 2.5 3 3.5 4 VCC (V) VCC (V) Figure 17. RMPA2259 W-CDMA 4x4mm2 PAM Vref = 2.85V, Pout = 8dBm, Freq = 1.95GHz -35 -37 -39 -41 -43 -45 -47 -49 -51 -53 -55 0.5 1 1.5 2 2.5 3 3.5 4 ACLR2 (dBc) ACLR1 (dBc) Figure 18. RMPA2259 W-CDMA 4x4mm2 PAM Vref = 2.85V, Pout = 8dBm, Freq = 1.95GHz -50 -52 -54 -56 -58 -60 -62 -64 -66 -68 -70 0.5 1 1.5 2 2.5 3 3.5 4 VCC (V) VCC (V) Figure 19. Figure 20. (c)2005 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com RMPA2259 Rev. E RMPA2259 28 dBm WCDMA Power EdgeTM Power Amplifier Module Evaluation Board Layout Materials List Qty 1 2 3 Ref 3 3 2 1 1 A/R A/R Item No. 1 2 3 4 5 5 (Alt) 6 7 7 (Alt) 8 9 Part Number G657553-1 V2 #142-0701-841 #2340-5211TN G657687 GRM39XR102KS0V ECJ-1V81H102K C3216X5R1A335M GRM39YSV104Z16V ECJ-1VB1CID4K SN63 SN96 PC Board SMA Connector Terminals Assembly, RMPA2059 1000pF Capacitor (0603) 1000pF Capacitor (0603) 3.3F Capacitor (1206) 0.1F Capacitor (0603) 0.1F Capacitor (0603) Solder Paste Solder Paste Description Vendor Fairchild Johnson 3M Fairchild Murata Panasonic TDK Murata Panasonic Indium Corp. Indium Corp Evaluation Board Schematic 3.3 F VCC1 SMA1 RF IN VMODE VREF 1000 pF 0.1 F 50 Ohm TRL 4 5 11 (PACKAGE BASE) 1000 pF 1 2 10 8 50 Ohm TRL 1000 pF 3.3 F VCC2 SMA2 RF OUT 2259 YWWXX 3, 6, 7, 9 (c)2005 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com RMPA2259 Rev. E RMPA2259 28 dBm WCDMA Power EdgeTM Power Amplifier Module Package Outline I/O 1 INDICATOR TOP VIEW 1 2 10 9 (4.00mm +.100 ) SQUARE -.050 3 4 5 2259 8 7 6 YWWXX Y W 2259 WX X 1.60mm MAX. FRONT VIEW .25mm TYP. 3.50mm TYP. See Detail A .40mm .30mm TYP. .85mm TYP. 11 2 1 1.08mm 1.84mm BOTTOM VIEW .18mm DETAIL A. TYP. 3.65mm .10mm .10mm .40mm .45mm Signal Descriptions Pin # 1 2 3 4 5 6 7 8 9 10 11 Signal Name Vcc1 RF In GND Vmode Vref GND GND RF Out GND Vcc2 GND Description Reference Voltage High Power/Low Power Mode Control Ground RF Input Signal Supply Voltage to Input Stage Ground Ground RF Output Signal Ground Supply Voltage to Output Stage Paddle Ground (c)2005 Fairchild Semiconductor Corporation 9 www.fairchildsemi.com RMPA2259 Rev. E RMPA2259 28 dBm WCDMA Power EdgeTM Power Amplifier Module Applications Information CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Precautions to Avoid Permanent Device Damage: * Cleanliness: Observe proper handling procedures to ensure clean devices and PCBs. Devices should remain in their original packaging until component placement to ensure no contamination or damage to RF, DC and ground contact areas. * Device Cleaning: Standard board cleaning techniques should not present device problems provided that the boards are properly dried to remove solvents or water residues. * Static Sensitivity: Follow ESD precautions to protect against ESD damage: - A properly grounded static-dissipative surface on which to place devices. - Static-dissipative floor or mat. - A properly grounded conductive wrist strap for each person to wear while handling devices. * General Handling: Handle the package on the top with a vacuum collet or along the edges with a sharp pair of bent tweezers. Avoiding damaging the RF, DC, and ground contacts on the package bottom. Do not apply excessive pressure to the top of the lid. * Device Storage: Devices are supplied in heat-sealed, moisture-barrier bags. In this condition, devices are protected and require no special storage conditions. Once the sealed bag has been opened, devices should be stored in a dry nitrogen environment. Device Usage: Fairchild recommends the following procedures prior to assembly. * Dry-bake devices at 125C for 24 hours minimum. Note: The shipping trays cannot withstand 125C baking temperature. * Assemble the dry-baked devices within 7 days of removal from the oven. * During the 7-day period, the devices must be stored in an environment of less than 60% relative humidity and a maximum temperature of 30C * If the 7-day period or the environmental conditions have been exceeded, then the dry-bake procedure must be repeated. (c)2005 Fairchild Semiconductor Corporation 10 www.fairchildsemi.com RMPA2259 Rev. E TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM Across the board. Around the world.TM OPTOLOGIC OPTOPLANARTM The Power Franchise PACMANTM Programmable Active DroopTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 (c)2005 Fairchild Semiconductor Corporation 11 www.fairchildsemi.com RMPA2259 Rev. E |
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